NDS355N Overview
Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
Key Features
- RDS(ON) = 0.125Ω @ VGS = 4.5V
- Proprietary package design using copper lead frame for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Compact industry standard SOT-23 surface mount package
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