NDS355N Datasheet | Fairchild Semiconductor

March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features 1.6A, 30V. RDS(ON) = 0.125Ω @ VGS = 4.5V. Proprietary package design using...