NDS355N - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Fairchild

Datasheet Details

Part number	NDS355N
Manufacturer	Fairchild
File Size	74.69 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	NDS355N Datasheet
Additional preview pages of the NDS355N datasheet.

Product details

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

1.6A, 30V. RDS(ON) = 0.125Ω @ VGS = 4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage T A = 25°.

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Published: May 12, 2005 |