| Part Number | NDS355AN Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is esp. 1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and. |
NDS355AN Datasheet and Specifications PDF
The NDS355AN is a N-Channel Logic Level Enhancement Mode Field Effect Transistor.
Key Specifications
| Package | SOT-23 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 1.22 mm |
| Length | 2.92 mm |
| Width | 3.05 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | NDS355AN Datasheet |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Manufacturer | onsemi |
| Overview | Features SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high dens. SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for . |