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NDS8410 Datasheet Single N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • 10A, 30V. RDS(ON) = 0.015Ω @ VGS = 10V RDS(ON) = 0.020Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted NDS8410 30.

More Datasheets from Fairchild (now onsemi)

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