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NDS8425 - Single N-channel MOSFET

Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 7.4 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.7 V.
  • Fast switching speed.
  • Low gate charge (11nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.

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Datasheet preview – NDS8425

Datasheet Details

Part number NDS8425
Manufacturer Fairchild
File Size 125.87 KB
Description Single N-channel MOSFET
Datasheet download datasheet NDS8425 Datasheet
Additional preview pages of the NDS8425 datasheet.

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Full PDF Text Transcription

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NDS8425 January 2001 NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint package. Applications • DC/DC converter • Load switch Features • 7.4 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.
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