NDS8410A Datasheet | Fairchild Semiconductor

October 2004 Single 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast switching, low inline power loss, and resistance to transients are needed. Features - 10.8 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V - Ultra-low gate charge - High performance trench...