NDS9953A - Dual P-Channel MOSFET

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Fairchild

Part number	NDS9953A
Manufacturer	Fairchild
File Size	342.69 KB
Description	Dual P-Channel MOSFET
Datasheet	NDS9953A Datasheet
Additional preview pages of the NDS9953A datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-2.9A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A= 25°C unless otherwise noted NDS9953A -3.

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Published: May 12, 2005 |