NDS9953A Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes. These devices are particularly suited for low voltage applications such as...
NDS9953A Key Features
- 2.9A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current han