NDS9955 - Dual N-Channel MOSFET

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Fairchild

Part number	NDS9955
Manufacturer	Fairchild
File Size	196.46 KB
Description	Dual N-Channel MOSFET
Datasheet	NDS9955 Datasheet
Additional preview pages of the NDS9955 datasheet.

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V, RDS(ON) = 0.200 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 G2 7 8 4 3 2 1 S ND 55 99 S2 G1 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Cont.

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Published: May 12, 2005 |