NDS9957 - Dual N-Channel MOSFET

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Fairchild

Part number	NDS9957
Manufacturer	Fairchild
File Size	340.89 KB
Description	Dual N-Channel MOSFET
Datasheet	NDS9957 Datasheet
Additional preview pages of the NDS9957 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

2.6A, 60V. RDS(ON) = 0.16Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. _______________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted NDS9957 60 ± 20.

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Published: May 12, 2005 |