4435 Overview
Key Specifications
Representative 4435 image (package may vary by manufacturer)
Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Key Features
- 8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V
- Low gate charge (17nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG
