4435 Datasheet and Specifications PDF

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive v.

*
*8.8 A,
*30 V RDS(ON) = 20 mΩ @ VGS =
*10 V RDS(ON) = 35 mΩ @ VGS =
*4.5 V
* Low gate charge (17nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Ma.

 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This  device  is  suitable  for  use  as  a  load  swi.

* RDS(ON) <  RDS(ON) <  Ω @ Ω @     
* High Power and current handing capability 
* Lead free product is acquired 
* Surface Mount Package     Application 
* PWM applications 
* Load switch 
* Power management    4435 DATASHEET 3424   D G S S1 S2 S3 G4    8 D 7D 6D 5D Marking and .

JMT P-channel Enhancement Mode Power MOSFET Features  VDS=-30V, ID=-10A RDS(ON) <23mΩ @ VGS = -10V RDS(ON) <34mΩ @ VGS = -4.5V  Advanced Trench Technology  Excellent RDS(ON) and Low Gate Charge .

* VDS=-30V, ID=-10A RDS(ON) <23mΩ @ VGS = -10V RDS(ON) <34mΩ @ VGS = -4.5V
* Advanced Trench Technology
* Excellent RDS(ON) and Low Gate Charge
* Lead free product is acquired Application
* PWM Applications
* Load Switch
* Power Management 100% UIS TESTED! 100% ΔVds TESTED! SOP-8 top view Marking.