FDB6030BL Overview
Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Key Features
- 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V
- Critical DC electrical parameters specified at elevated temperature
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
- High performance trench technology for extremely low RDS(ON)
- 175°C maximum junction temperature rating. D D G G D S TO-220 FDP Series G S TC = 25°C unless otherwise noted TO-263AB FDB Series S
