FDMA910PZ Description
Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm This device is designed specifically for.
FDMA910PZ Key Features
- Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A
- Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A
- Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A
- Low Profile
- 0.8 mm maximum in the new package MicroFET 2x2 mm