FDMS0309AS Description
Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A Advanced package and silicon bination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 Robust Package Design 100% UIL tested RoHS pliant The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been...
FDMS0309AS Key Features
- Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A
- Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
- Advanced package and silicon bination for low rDS(on) and
- SyncFETTM Schottky Body Diode
- MSL1 Robust Package Design
- 100% UIL tested
- RoHS pliant