FDMS3500 Description
at VGS = 10V, ID = 11.5A Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A Advanced Package and Silicon bination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMS3500 Key Features
- Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A
- Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL Tested
- RoHS pliant
- DC Conversion