FDMS3615S Datasheet

FDMS3615S Description

N-Channel „ Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A „ Max rDS(on) = 8.3 mΩ at VGS = 4.5 V, ID = 13 A Q2: N-Channel „ Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 4.6 mΩ at VGS = 4.5 V, ID = 15 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS...