FDMS7578 Description
Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 8 mΩ at VGS = 4.5 V, ID = 14 A Advanced Package and Silicon bination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery MSL1 robust package design This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC...
FDMS7578 Key Features
- Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 17 A
- Max rDS(on) = 8 mΩ at VGS = 4.5 V, ID = 14 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design