FDMS86101DC Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient . ©2012 Fairchild Semiconductor Corporation FDMS86101DC Rev.
FDMS86101DC Key Features
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A
- Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A
- High performance technology for extremely low rDS(on)
- 100% UIL Tested
- RoHS pliant