FDMS86200DC Description
Shielded Gate MOSFET Technology Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A High performance technology for extremely low rDS(on) 100% UIL tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. Advancements in...
FDMS86200DC Key Features
- Shielded Gate MOSFET Technology
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A
- Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A
- High performance technology for extremely low rDS(on)
- 100% UIL tested
- RoHS pliant