FDN327N Description
This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
FDN327N Key Features
- 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 V
- Low gate charge (4.5 nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)