FDN327N - N-Channel MOSFET

onsemi

General Description

This 20 V N

POWERTRENCH process.

It has been optimized for power management applications.

Key Features

2 A, 20 V.
RDS(on) = 70 mW @ VGS = 4.5 V.
RDS(on) = 80 mW @ VGS = 2.5 V.
RDS(on) = 120 mW @ VGS = 1.8 V.
Low Gate Charge (4.5 nC typical).
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(on).
This Device is Pb.
Free and Halogen Free.

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FDN327N n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDN327N
Manufacturer	onsemi
File Size	289.91 KB
Description	N-Channel MOSFET
Datasheet	FDN327N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH), 1.8 Vgs Specified 20 V, 2 A, 70 mW FDN327N General Description This 20 V N−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features • 2 A, 20 V ♦ RDS(on) = 70 mW @ VGS = 4.5 V ♦ RDS(on) = 80 mW @ VGS = 2.5 V ♦ RDS(on) = 120 mW @ VGS = 1.8 V • Low Gate Charge (4.5 nC typical) • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(on) • This Device is Pb−Free and Halogen Free Applications • Load Switch • Battery Protection • Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.