FDN327N
Description
This 20 V N-Channel MOSFET uses onsemi’s high voltage POWERTRENCH process.
Key Features
- RDS(on) = 70 mW @ VGS = 4.5 V
- RDS(on) = 80 mW @ VGS = 2.5 V
- RDS(on) = 120 mW @ VGS = 1.8 V
- Low Gate Charge (4.5 nC typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- This Device is Pb-Free and Halogen Free
Applications
- Battery Protection
