FDS2672 Description
This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. ©2006 Fairchild Semiconductor Corporation FDS2672 Rev.
FDS2672 Key Features
- Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A
- Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A
- Fast switching speed
- High performance trench technology for extremely low rDS(on)
- RoHS pliant
- DC-DC conversion
- FDS2672 N-Channel UltraFET Trench® MOSFET