FDW2507N Description
This monolithic mon drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.
FDW2507N Key Features
- 7.5 A, 20 V. RDS(ON) = 19 mΩ @ VGS = 4.5 V RDS(ON) = 23 mΩ @ VGS = 2.5 V
- Isolated source and drain pins
- High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V
- Low profile TSSOP-8 package