FDW2501N Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
FDW2501N Key Features
- 6 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5V RDS(ON) = 0.028 Ω @ VGS = 2.5V
- Extended VGSS range (±12V) for battery