FDW254P Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V 8V).
FDW254P Key Features
- 9.2 A, -20 V. RDS(ON) = 0.012 Ω @ VGS = -4.5 V RDS(ON) = 0.015 Ω @ VGS = -2.5 V RDS(ON) = 0.0215 Ω @ VGS = -1.8 V