FQA8N80C_F109 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies,...
FQA8N80C_F109 Key Features
- 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
- Low gate charge ( typical 35 nC)
- Low Crss ( typical 13pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant