FQD12N20LTM_F085 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch...
FQD12N20LTM_F085 Key Features
- 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
- Low gate charge ( typical 16 nC)
- Low Crss ( typical 17 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Low level gate drive requirement allowing direct
- Qualified to AEC Q101
- RoHS pliant