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FMA3019QFN - HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE

General Description

The BA2250QFN MMIC module is a selfbiased, integrated and packaged balanced amplifier mounted onto 6x6mm2 FR4 board.

The active device is a pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems.

Key Features

  • (1.7-2.0GHZ):.
  • Preliminary Datasheet v2.1 BOARD.

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Datasheet Details

Part number FMA3019QFN
Manufacturer Filtronic Compound Semiconductors
File Size 110.01 KB
Description HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE
Datasheet download datasheet FMA3019QFN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FMA3019QFN HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE FEATURES (1.7-2.0GHZ): • • • • • • • • • • Preliminary Datasheet v2.1 BOARD PHOTOGRAPH: • Balanced low noise amplifier module No external couplers required Excellent 42 dBm Output IP3 28.5 dBm Output Power (P1dB) Excellent Return Loss (RL): -25dB 14 dB Small-Signal Gain (SSG) 1.7 dB Noise Figure 6 V supply (380mA current) Cost effective footprint: 4mm x 4mm QFN 6 mm x 6mm evaluation board available RoHS compliant: (Directive 2002/95/EC) GENERAL DESCRIPTION: The BA2250QFN MMIC module is a selfbiased, integrated and packaged balanced amplifier mounted onto 6x6mm2 FR4 board. The active device is a pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems.