FMA3019QFN
FMA3019QFN is HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE manufactured by Filtronic Compound Semiconductors.
HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE
Features
(1.7-2.0GHZ):
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Preliminary Datasheet v2.1
BOARD PHOTOGRAPH:
- Balanced low noise amplifier module No external couplers required Excellent 42 d Bm Output IP3 28.5 d Bm Output Power (P1d B) Excellent Return Loss (RL): -25d B 14 d B Small-Signal Gain (SSG) 1.7 d B Noise Figure 6 V supply (380m A current) Cost effective footprint: 4mm x 4mm QFN 6 mm x 6mm evaluation board available Ro HS pliant: (Directive 2002/95/EC)
GENERAL DESCRIPTION:
The BA2250QFN MMIC module is a selfbiased, integrated and packaged balanced amplifier mounted onto 6x6mm2 FR4 board. The active device is a pair of pseudomorphic High Electron Mobility Transistors (p HEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation.
TYPICAL APPLICATIONS:
- - Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations High intercept-point LNAs
ELECTRICAL SPECIFICATIONS:
PARAMETER
Frequency Minimum Noise Figure Input Third-Order Intercept Point
SYMBOL
Freq NF IIP3
CONDITIONS
VDS = 6.0 V; IDS = 380m A VDS = 6.0 V; IDS = 380m A VDS = 6.0 V; IDS = 380m A
1.7 1.75 27.5
1.85 1.8 28.5
2 2.1 30
UNITS
GHz d B d Bm
Small-Signal Gain Small-Signal Input Return Loss Small-Signal Output Return Loss Power at 1d B Gain pression
SSG S11 S22 P1d B
VDS = 6.0 V; IDS = 380m A VDS = 6.0 V; IDS = 380m A VDS = 6.0 V; IDS = 380m A VDS = 6.0 V; IDS = 380m...
