Description
AND APPLICATIONS
DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm)
The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct
Features
- S.
- 31.5 dBm Output Power at 1-dB Compression at 18 GHz.
- 8 dB Power Gain at 18 GHz.
- 28 dBm Output Power at 1-dB Compression at 3.3V.
- 45dBm Output IP3 at 18GHz.
- 50% Power-Added Efficiency
DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X)
LP1500.
LP1500 Datasheet
