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LP1500 - 1W POWER PHEMT

General Description

AND APPLICATIONS DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct

Key Features

  • S.
  • 31.5 dBm Output Power at 1-dB Compression at 18 GHz.
  • 8 dB Power Gain at 18 GHz.
  • 28 dBm Output Power at 1-dB Compression at 3.3V.
  • 45dBm Output IP3 at 18GHz.
  • 50% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X) LP1500.

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Datasheet Details

Part number LP1500
Manufacturer Filtronic Compound Semiconductors
File Size 40.32 KB
Description 1W POWER PHEMT
Datasheet download datasheet LP1500 Datasheet

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LP1500P100 PACKAGED 1W POWER PHEMT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1W POWER PHEMT • FEATURES ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression at 3.3V ♦ 45dBm Output IP3 at 18GHz ♦ 50% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X) LP1500 • DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5X16.1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 1500 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.