Datasheet Details
| Part number | LP1500SOT2233 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 69.84 KB |
| Description | Low Noise/ High Linearity Packaged PHEMT |
| Datasheet |
 LP1500SOT2233 Datasheet
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General Description
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate.
Key Features
- LP1500SOT223 Low Noise, High Linearity Packaged PHEMT.
- +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range GATE SOURCE SOURCE DRAIN (TOP VIEW).