LP1500SOT89 Description
AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
LP1500SOT89 Key Features
- 27.5 dBm Output Power at 1-dB pression at 1.8 GHz
- 17 dB Power Gain at 1.8 GHz
- 1.0 dB Noise Figure
- 44 dBm Output IP3 at 1.8 GHz
- 50% Power-Added Efficiency
- DESCRIPTION AND