LP1500SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LP1500SOT89
Manufacturer	Filtronic Compound Semiconductors
File Size	44.12 KB
Description	LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Datasheet	LP1500SOT89 Datasheet
Additional preview pages of the LP1500SOT89 datasheet.

Product details

Description

AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography.

Features

S.
27.5 dBm Output Power at 1-dB Compression at 1.8 GHz.
17 dB Power Gain at 1.8 GHz.
1.0 dB Noise Figure.
44 dBm Output IP3 at 1.8 GHz.
50% Power-Added Efficiency.

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Published: Mar 22, 2005 |