Datasheet Details
| Part number | LP1500P100 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 48.47 KB |
| Description | PACKAGED 1W POWER PHEMT |
| Datasheet |
 LP1500P100 Datasheet
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General Description
AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography.
Key Features
- S.
- 31 dBm Output Power at 1-dB Compression at 15 GHz.
- 9 dB Power Gain at 15 GHz.
- 42 dBm Output IP3 at 15GHz.
- 60% Power-Added Efficiency LP1500P100.