LP1500P100 Description
AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
LP1500P100 Key Features
- 31 dBm Output Power at 1-dB pression at 15 GHz
- 9 dB Power Gain at 15 GHz
- 42 dBm Output IP3 at 15GHz
- 60% Power-Added Efficiency
- DESCRIPTION AND