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LP3000 - 2W Power PHEMT

General Description

AND APPLICATIONS DIE SIZE: 28.3X16.5 mils (720x420 µm) DIE THICKNESS: 2.6 mils (65 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam dire

Key Features

  • S.
  • 33.5 dBm Output Power at 1-dB Compression at 18 GHz.
  • 7 dB Power Gain at 18 GHz.
  • 30.5 dBm Output Power at 1-dB Compression at 3.3V.
  • 45% Power-Added Efficiency DRAIN BOND PAD (4X) SOURCE BOND PAD (2x) GATE BOND PAD (4X) LP3000.

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Datasheet Details

Part number LP3000
Manufacturer Filtronic Compound Semiconductors
File Size 44.97 KB
Description 2W Power PHEMT
Datasheet download datasheet LP3000 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2 W POWER PHEMT • FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compression at 3.3V ♦ 45% Power-Added Efficiency DRAIN BOND PAD (4X) SOURCE BOND PAD (2x) GATE BOND PAD (4X) LP3000 • DESCRIPTION AND APPLICATIONS DIE SIZE: 28.3X16.5 mils (720x420 µm) DIE THICKNESS: 2.6 mils (65 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 3000 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.