Description
AND APPLICATIONS
DIE SIZE: 28.3X16.5 mils (720x420 µm) DIE THICKNESS: 2.6 mils (65 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm)
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam dire
Features
- S.
- 33.5 dBm Output Power at 1-dB Compression at 18 GHz.
- 7 dB Power Gain at 18 GHz.
- 30.5 dBm Output Power at 1-dB Compression at 3.3V.
- 45% Power-Added Efficiency
DRAIN BOND PAD (4X) SOURCE BOND PAD (2x) GATE BOND PAD (4X)
LP3000.
LP3000 Datasheet
