Datasheet Summary
Preliminary Data Sheet 2.2
High Power GaAs SPDT Switch
Features
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- - 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at 1.8GHz Very low Insertion loss: 0.5dB at 1.8GHz Very low control current
Functional Schematic
V1
V2
RF1
RF2
Description and Applications:
The FMS2014QFN is a low loss, high power and linear single pole double throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers excellent performance...