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FMS2014QFN - High Power GaAs SPDT Switch

General Description

The FMS2014QFN is a low loss, high power and linear single pole double throw Gallium Arsenide antenna switch designed for use in mobile handset applications.

Key Features

  • 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at 1.8GHz Very low Insertion loss: 0.5dB at 1.8GHz Very low control current Functional Schematic ANT V1 V2 RF1 RF2.

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Datasheet Details

Part number FMS2014QFN
Manufacturer Filtronic
File Size 182.88 KB
Description High Power GaAs SPDT Switch
Datasheet download datasheet FMS2014QFN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet 2.2 FMS2014QFN High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at 1.8GHz Very low Insertion loss: 0.5dB at 1.8GHz Very low control current Functional Schematic ANT V1 V2 RF1 RF2 Description and Applications: The FMS2014QFN is a low loss, high power and linear single pole double throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for switch applications.