Datasheet Summary
High Power Reflective GaAs SP4T Switch
Features
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- - 3x3x0.9mm Packaged pHEMT Switch High isolation: >30dB at 1.8GHz Low Insertion loss: 0.65dB at 1.8GHz Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels RoHS pliant (Directive 2002/95/EC)
Datasheet v2.4
FUNCTIONAL SCHEMATIC:
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RF4
GENERAL DESCRIPTION:
The FMS2016-001 is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power switching applications. The die is fabricated using the Filtronic FL05 0.5μm switch process technology, which offers excellent...