Datasheet Summary
Preliminary Data Sheet 2.1
High Power Reflective GaAs SP4T Switch
Features
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- 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high isolation: >29dB at 1.8GHz Very low Insertion loss: 0.65dB at 1.8GHz Very low control current
Functional Schematic
RF1
RF2
RF3
RF4
Description and Applications:
The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm...