FPD6836 Description
The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 360 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.
FPD6836 Key Features
- 25.5 dBm Output Power (P1dB)
- 10 dB Power Gain at 12 GHz
- 16.5 dB Max Stable Gain at 12 GHz
- 12 dB Maximum Stable Gain at 24 GHz
- 50% Power-Added Efficiency
- 8V Operation