Formosa MS MMBT5551
NPN Transistor
| Part No. | MMBT5551 |
|---|---|
| Datasheet | MMBT5551 Download |
| Manufacturer |  Formosa MS |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
z Complementary to MMBT5401 z Ideal for medium power amplification and switching MARKING: G1 SOT-23 1. BASE 2. EMITTER - 3. COLLECTORMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 180 160 6 0.6 300 150 -55-150 Units V V V A mW ℃ ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Input capacitance Noise figure *Pulse test V(BR)C