Taitron Components MMBT5551
SMD High Voltage Transistor
FEATURES
● NPN Silicon Epitaxial Planar Transistor for Switching and AmplifierAPPLICATIONS
● RoHS complianceMECHANICAL DATA
SOT-23 Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gramMAXIMUM RATINGS
(T Ambient=25ºC unless noted otherwise) SymbolDESCRIPTION
MMBT5550 MMBT5551 VCEO VCBO VEBO IC Marking Code Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous M1F G1 140 160 160 180 6.0 600 Thermal Characteristics Symbol Ptot RθJA Ptot RθJA TJ, TSTGDESCRIPTION
Total Device Dissipation FR-5 Board, (Note 1) TA= 25°C Derate above 25°C Thermal Resistance from Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA= 25°C, Derate above 25°C Thermal Resistance from Junction to Ambient Junction and Storage Temperature Range MMBT5550 MMBT5551 225 1.8 556 300 2.4