MMBT5551 Description
MMBT5551 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 160 Volts POWER 250 mWatts.
MMBT5551 Key Features
- NPN Silicon, planar design
- Collector-emitter voltage VCE = 160V
- Collector current IC = 300mA
- Lead free in ply with EU RoHS 2002/95/EC directives
- Green molding pound as per IEC61249 Std. . (Halogen Free)
- Case: SOT-23, Plastic
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0003 ounces, 0.0084 grams
- Marking: M51