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MMBT5551 - NPN HIGH VOLTAGE TRANSISTOR

Features

  • NPN Silicon, planar design.
  • Collector-emitter voltage VCE = 160V.
  • Collector current IC = 300mA.
  • Lead free in comply with EU RoHS 2002/95/EC directives.
  • Green molding compound as per IEC61249 Std. . (Halogen Free).

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MMBT5551 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 160 Volts POWER 250 mWatts FEATURES • NPN Silicon, planar design • Collector-emitter voltage VCE = 160V • Collector current IC = 300mA • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0003 ounces, 0.0084 grams • Marking: M51 C 0.120(3.04) 0 . 11 0 ( 2 . 8 0 ) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0 .004 (0.10 ) 0 .000 (0.00 ) 0 .020 (0.50 ) 0 .013 (0.35 ) 0.008(0.20) 0.003(0.08) 0. 044(1 .10) 0. 035(0 .90) 0.006(0.15)MIN.
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