MMBT5551LT1
MMBT5551LT1 is manufactured by ETL.
High Voltage Transistors
NPN Silicon
3 COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector- Emitter Voltage
V CEO
Collector- Base Voltage
V CBO
Emitter- Base Voltage
V EBO
Collector Current
- Continuous I C
1 BASE
Value 140 160 6.0 600
2 EMITTER
Unit Vdc Vdc Vdc mAdc
MMBT5550LT1 MMBT5551LT1
1 2
CASE 318- 08, STYLE 6 SOT- 23 (TO- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit
225 mW...
