MMBT5551LT1 Datasheet and Specifications PDF

The MMBT5551LT1 is a High Voltage Transistors.

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Part NumberMMBT5551LT1 Datasheet
ManufacturerETL
Overview High Voltage Transistors NPN Silicon 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — C. .
Part NumberMMBT5551LT1 Datasheet
DescriptionHigh Voltage Transistors
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1/D High Voltage Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5550LT1 MMBT5551LT1* *Motorola Preferred Device MAXIMUM RAT. Unit OFF CHARACTERISTICS Collector
* Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector
* Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter
* Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE =.
Part NumberMMBT5551LT1 Datasheet
DescriptionNPN Transistor
ManufacturerTGS
Overview The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. 6 V IC Collector Current 600mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT .
Part NumberMMBT5551LT1 Datasheet
DescriptionTRANSISTOR
ManufacturerWEJ
Overview RoHS MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o) .,LTDCollector-Emiller Voltage:VCEO=160V SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3. oltage BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VCE(sat) VBE(sat) VBE(sat) 180 160 6 80 80 30 50 50 250 0.5 0.15 1 1 V IC=100 A IE=0 V IC=1mA IB=0 V IE=10 A IC=0 nA VCB=120V, VC=0 nA VCB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=-10mA VCE=5V, IC=50mA V IC=50mA, IB=5mA V IC=10mA, IB=1mA V IC=.