MMBT5551LT1 - NPN Transistor

TGS

General Description

The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages.

Maximum Temperatures Storage Temperature-55+150°C Junction Temperature +150°C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW

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Datasheet Details

Part number	MMBT5551LT1
Manufacturer	TGS
File Size	28.24 KB
Description	NPN Transistor
Datasheet	MMBT5551LT1 Datasheet

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TIGER ELECTRONIC CO.,LTD MMBT5551LT1 NPN EPITAXIAL PLANAR TRANSISTOR Description The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature..................................................................................................-55+150°C Junction Temperature............... ............................................................ ..........+150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage. .......................................................................................