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RoHS
MMBT5551LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o)
.,LTDCollector-Emiller Voltage:VCEO=160V
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
O Unit:mm
CABSOLUTE MAXIMUM RATINGS ICCharacteristic
Collector-Base Voltage Collector-Emitter Voltage
NEmitter-Base Voltage
Collector Current
OCollector Dissipation Ta=25oC*
Junction Temperature
RStorage Temperature
Symbol
VCBO VCEO VEBO Ic PD Tj Tstg
Rating
180 160
6 600 225 150 -55~150
(Ta=25 oC)
Unit
V V V mA mW
O
C OC
TElectrical Characteristics
(Ta=25 oC)
Parameter
Symbol MIN. TYP. MAX.
MMBT5551LT1 Datasheet
