| Part Number | MMBT5551 Datasheet |
|---|---|
| Manufacturer | Diodes Incorporated |
| Overview |
Features
• BVCEO > 160V • Ideal for Low Power Amplification and Switching • Complementary PNP Type Available (MMBT5401) • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony .
* BVCEO > 160V * Ideal for Low Power Amplification and Switching * Complementary PNP Type Available (MMBT5401) * Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) * Halogen and Antimony Free. “Green” Device (Note 3) * An automotive-compliant part is available under separate datasheet (MMBT5551Q. |
MMBT5551 Datasheet and Specifications PDF
The MMBT5551 is a NPN HIGH-VOLTAGE TRANSISTOR.
| Part Number | MMBT5551 Datasheet |
|---|---|
| Description | NPN HIGH VOLTAGE TRANSISTOR |
| Manufacturer | PanJit Semiconductor |
| Overview |
MMBT5551
NPN HIGH VOLTAGE TRANSISTOR
VOLTAGE 160 Volts POWER 250 mWatts
FEATURES
• NPN Silicon, planar design • Collector-emitter voltage VCE = 160V • Collector current IC = 300mA • Lead free in compl.
* NPN Silicon, planar design * Collector-emitter voltage VCE = 160V * Collector current IC = 300mA * Lead free in comply with EU RoHS 2002/95/EC directives. * Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA * Case: SOT-23, Plastic * Terminals: Solderable per MIL-STD-750,. |
| Part Number | MMBT5551 Datasheet |
|---|---|
| Description | NPN General-Purpose Amplifier |
| Manufacturer | onsemi |
| Overview |
This device is designed for general−purpose high−voltage
amplifiers and gas discharge display drivers.
Features
• This Devices is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
ABSOLUTE MAXIMUM.
* This Devices is Pb *Free, Halogen Free/BFR Free and is RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Parameter Value Unit VCEO Collector *Emitter Voltage 160 V VCBO Collector *Base Voltage 180 V VEBO Emitter *Base Voltage 6 V IC Collector Current * Continuous 600 mA TJ, TS. |
| Part Number | MMBT5551 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Formosa MS |
| Overview | SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) Formosa MS FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching MARKING: G1 SOT-23 1. BASE 2. E. z Complementary to MMBT5401 z Ideal for medium power amplification and switching MARKING: G1 SOT-23 1. BASE 2. EMITTER - 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag. |