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MMBT5551 - HIGH CURRENT SILICON BRIDGE RECTIFIERS

Key Features

  • High Collector-Emitter Voltage: VCEO=160V.
  • High current gain 3 1 2 SOT-23.
  • Pb-free plating product number:MMBT5551L www. DataSheet4U. com.

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UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain 3 1 2 SOT-23 *Pb-free plating product number:MMBT5551L www.DataSheet4U.com ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBT5551L-x-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating (1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23 (4) x: refer to Classification of hFE (5) L: Lead Free Plating, Blank: Pb/Sn MARKING G1 www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.