MMBT5551W Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor Ro HS pliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version plementary to MMBT5401W MARKING: K4N Base Collector Emitter Top View 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 -0.650 TYP. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal Resistance, Junction to Ambient Opterating & Storage Temperature SYMBOL VCBO VCEO VEBO IC PC RθJA TJ, TSTG RATINGS 180 160 6 200 200 625 150, -55 ~ 150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise...