Good-Ark Semiconductor MMBT5551
NPN Transistor
| Part No. | MMBT5551 |
|---|---|
| Datasheet | MMBT5551 Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Ideal for medium power amplification and switching● Complementary PNP MMBT5401
APPLICATIONS
● General Purpose Amplifier● Switching
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted） Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal Resistance, Junction to Ambient Operating Temperature Storage Temperature Range Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. Symbol VCBO VCEO VEBO IC PC RΘJA TJ TSTG MMBT5551 NPN Transistor 3 2 1 Package: SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Value 180 160 6.0 600 300 416 -55 to +150 -55 to +150 Unit V V V mA mW °C/W °C °C 1/5ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted） Parameter Symbol Test Conditions Min Collector-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0 180 Collector-Emitter Breakdown Voltage V(BR)CEO* IC=1mA, IB=0 160 Emitter-Base Breakdown Voltage Collector Cut-off Current
