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FD6288Q - 3-PHASE BRIDGE DRIVER

Download the FD6288Q datasheet PDF. This datasheet also covers the FD6288T variant, as both devices belong to the same 3-phase bridge driver family and are provided as variant models within a single manufacturer datasheet.

General Description

FD6288T&Q is an integrated three-span half-bridge gate driver IC designed for high voltage, high speed drive MOSFETs that operate up to +250V.

The special HVIC technology can realize stable monolithic structure.

Key Features

  • Fully operational to +250V.
  • Gate driver supply range from 5V to 20V.
  • Independent Three half-bridge drivers.
  • 3.3V/5V logic input compatible.
  • Undervoltage lockout for all channels.
  • Cross-conduction prevention logic.
  • Internal set dead-time.
  • Matched propagation delay for both channels.
  • Outputs in phase with inputs.
  • RoHS compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FD6288T-Fortior.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FD6288Q
Manufacturer Fortior
File Size 652.57 KB
Description 3-PHASE BRIDGE DRIVER
Datasheet download datasheet FD6288Q Datasheet

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Other Datasheets by Fortior

Part Number Description
FD6288 3-PHASE BRIDGE DRIVER
FD6288T 3-PHASE BRIDGE DRIVER
FD6287T Three-phase 250V gate driver
FD6187T Three-phase 180V gate driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FD6288T&Q FD6288T&Q Description FD6288T&Q is an integrated three-span half-bridge gate driver IC designed for high voltage, high speed drive MOSFETs that operate up to +250V. The special HVIC technology can realize stable monolithic structure. Logic inputs are compatible with CMOS or LSTTL outputs, and the logic voltage can be down to 3.3V. The output driver has a high pulse current buffer stage, which aims to achieve a minimum driver impedance. Propagation delays are matched to simplify use in high frequency applications. Floating channel can be used to drive N-channel power MOSFET with high-end configuration, working voltage up to 250V.