Fortune Semiconductor FS8205
Dual N-Channel Power MOSFET
FEATURES
Low on-resistance RDS(ON) = 25 mΩ MAX. (VGS = 4.5V, ID = 4A) RDS(ON) = 35 mΩ MAX. (VGS = 2.5V, ID = 3A) 2.APPLICATIONS
Li-ion battery management applications 3. Ordering Information Product Number FS8205 4. Pin Assignment S1 D12 S2 5. VDS VGSABSOLUTE MAXIMUM RATINGS
Symbol ID @TA = 25℃ ID @TA = 70℃ IDM PD @TA = 25℃ TSTG TJ 6. Fo Thermal Data Symbol Rthj-a Rev. 1.0 F P r R ro SC ef pe ’ er rti en es ce O nl yDESCRIPTION
Package Type Quantity/Reel SOT23-6 package version SOT23-6 3,000 SOT23-6 Top View 1 2 3 4 G1 G2 5 6 D12 Parameter Rating Units Drain-Source Voltage Gate-Source Voltage 20 V ±12 6 5 V Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 A A 25 A Total Power Dissipation 1 W Linear Derating Factor 0.008 W/℃ ℃ ℃ Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Parameter Max. Value 125 Unit ℃/W Thermal Resistance Junction-ambient3 3/6 FS8205 7.ELECTRICAL CHARACTERISTICS
Symbol Parameter Drain-Source Break...