Dual N-channel Power MOSFET
| Part number | FS8205 |
|---|---|
| Manufacturer | Fortune Semiconductor |
| File Size | 726.48 KB |
| Description | Dual N-Channel Power MOSFET |
| Datasheet | FS8205-FortuneSemiconductor.pdf |
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Value 125 Unit ℃/W Junction-ambient3 3/6 FS8205 7. Symbol Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient @Tj = 25℃ ( unless otherwise specified ) Test Conditions VGS = 0V, ID = 250uA Reference to 25℃, ID=1mA 2 Min. Source-Drain Diode Symbol IS VSD Notes：.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| FUXINSEMI | FS8205A | N-Channel MOSFET | FUXINSEMI |
| CanSheng Industry | FS8205A | Dual N-Channel MOSFET | CanSheng Industry |
See all Fortune Semiconductor datasheets
| Part Number | Description |
|---|---|
| FS8205A | Dual N-Channel Enhancement Mode Power MOSFET |
| FS8802 | High Efficiency Low Start-up Voltage Step-up DC-DC Converter |
| FS8853 | 300mA LDO Linear Regulator |
| FS8853A | 300mA LDO Linear Regulator |
| FS8854 | 350mA LDO Linear Regulator |
| FS8855 | 500mA LDO Linear Regulator |
| FS8856 | 550mA LDO Linear Regulator |
| FS8858 | 800mA Adjustable & Fixed Voltage LDO Linear Regulator |
| FS8860 | 1.0A Adjustable & Fixed Voltage LDO Linear Regulator |
| FS8861 | 1.0A Adjustable and Fixed Voltage LDO Linear Regulator |
