FUXINSEMI FS8205A
N-Channel MOSFET
| Part No. | FS8205A |
|---|---|
| Datasheet | FS8205A Download |
| Manufacturer | FUXINSEMI |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process technology High density cell design for ultra low on-resistance Application Battery protection Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 Page 1 Ver2.1 FS8205A N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature VDS 20 V VGS ±12 V ID 6 A IDM 25 A PD 1.5 W TJ -55 ~ +150 ℃ TSTG -55 ~ +150 ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Static Characteristics Drain-source breakdown voltage Zero gate voltage drain current V(BR)DSS IDSS VGS = 0V, ID =250µA VDS =20V,VGS = 0V Gate-body leakage current Gate threshold voltage Drain-source on-resistanc...
