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Product Summary
V(BR)DSS
RDS(on)MAX
ID
25mΩ@4.5V
20V
6A
32mΩ@2.5V
FS8205A
N-Channel Enhancement Mode MOSFET
Feature
Advanced trench process technology High density cell design for ultra low on-resistance
Application
Battery protection Switching application
Package
Circuit diagram
SOT-23-6L
Marking
G1 D1/D2 G2
8205A
S1 D1/D2 S2
www.fuxinsemi.com
Page 1
Ver2.1
FS8205A
N-Channel Enhancement Mode MOSFET
Absolute maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature
VDS
20
V
VGS
±12
V
ID
6
A
IDM
25
A
PD
1.
FS8205A Datasheet
